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UPC8204TK-E2 Просмотр технического описания (PDF) - NEC => Renesas Technology

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UPC8204TK-E2
NEC
NEC => Renesas Technology NEC
UPC8204TK-E2 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
PRELIMINARY DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8204TK
VARIABLE GAIN AMPLIFIER
FOR TRANSMITTER AGC
DESCRIPTION
The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin
lead-less minimold suitable for surface mount.
This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
This IC is as same circuit current as conventional µPC8119T and µPC8120T, but operates at higher frequency
and wider gain control range.
FEATURES
• Gain control range
• Maximum power gain
• Operating frequency
• Supply voltage
• High-density surface mounting
: GCR = 40 dB TYP. @ f = 1.9 GHz
: GCR = 40 dB TYP. @ f = 2.4 GHz
: GPMAX = 14.5 dB TYP. @ f = 1.9 GHz
: GPMAX = 14.0 dB TYP. @ f = 2.4 GHz
: f = 0.8 to 2.5 GHz
: VCC = 2.7 to 3.3 V
: 6-pin lead-less minimold package
APPLICAION
• 0.8 to 2.5 GHz transmitter/receiver system (PHS, WLAN and so on)
ORDERING INFORMATION
Part Number
µPC8204TK-E2
Package
6-pin lead-less minimold
(1511)
Marking
6E
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPC8204TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10408EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003

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