AP4511GH Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP4511GH Datasheet PDF : 8 Pages
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AP4511GH-A
N-Channel
50
T C = 25 o C
10V
40
7.0V
5.0V
30
4.5V
20
10
V G =3.0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
38
ID=5A
T C =25 o C
34
30
26
22
18
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
4
T j =150 o C
2
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
50
T C = 150 o C
40
30
20
10V
7.0V
5.0V
4.5V
10
V G =3.0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID=8A
V G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.1
0.8
0.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
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