AP4511GH Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP4511GH Datasheet PDF : 8 Pages
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AP4511GH-A
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
-35 -
-
V
- -0.02 - V/℃
-
- 45 mΩ
-
- 70 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8 - -2.5 V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-35V, VGS=0V
Drain-Source Leakage Current (Tj=150oC)
VDS=-28V, VGS=0V
IGSS
Gate-Source Leakage
VGS=±20V
Qg
Total Gate Charge2
ID=-6A
- 10 -
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 10 19 nC
Qgs
Gate-Source Charge
VDS=-28V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-18V
tr
Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
tf
Fall Time
RD=18Ω
Ciss
Input Capacitance
VGS=0V
-
2
- nC
-
6
- nC
- 10 - ns
-
6
- ns
- 26 - ns
-
7
- ns
- 690 1100 pF
Coss
Output Capacitance
VDS=-25V
- 165 - pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg
Gate Resistance
f=1.0MHz
- 130 - pF
-
5 7.5 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-6A, VGS=0V
IS=-6A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 20 - ns
- 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
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