AP4511GH Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP4511GH Datasheet PDF : 8 Pages
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Advanced Power
Electronics Corp.
AP4511GH-A
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
S1 G1
S2
G2
D1/D2
TO-252-4L
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
35V
27mΩ
8.6A
-35V
45mΩ
-6.7A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
35
-35
±20
±20
8.6
-6.7
6.9
-5.4
50
-50
3.125
0.025
-55 to 150
-55 to 150
Max.
Max.
Value
8
40
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
200627072-1/7
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