MRF6S9060NR1(2008) Просмотр технического описания (PDF) - Freescale Semiconductor
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MRF6S9060NR1 Datasheet PDF : 18 Pages
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TYPICAL CHARACTERISTICS
22
21.5 TC = −30_C
Gps
21
25_C
20.5
85_C
20
80
−30_C
70
25_C
60
85_C
50
40
19.5
30
19
ηD
18.5
18
1
VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
10
20
10
0
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
22
21
20
19
18
32 V
28 V
17
VDD = 24 V
16
15
14
13
IDQ = 450 mA
12
f = 880 MHz
11
10
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
108
107
106
105
90
110 130 150 170
190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.1%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9060NR1 MRF6S9060NBR1
8
RF Device Data
Freescale Semiconductor
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