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производитель

BSS138LT1

Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23

Unspecified 

WILLAS

P1.o0AwSUeRrFAMCEOMSOFUNETTSCH2O0T0TKYmBAARmRIEpRsR,E5CT0IFIVERoSl-t2s0V- 200V

SOD-123+ PACKAGE

FM120-M+

BSS8LTTH1RU

FM1200-M+

Pb Free Product

Features

Package outline

TYPICAL ELECTRICAL CHARACTERISTICS

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low 1p0rofile surface mounted application in order to

optim9ize VbGoSa=rd2.s5pVace.

• Low power loss, high efficiency.

• High c8urrent capability, low forward voltage drop.

• High s7urge capability.

• Guardring for overvoltage protection.

• Ultra h6 igh-speed switching.

150°C

•

•

Silico5n epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

25°C

MIL-S4TD-19500 /228

• RoHS3product for packing code suffix "G"

Halogen free product for packing code suffix "H"

-55°C

Mech2 anical data

SOD-123H

8

VGS = 2.75 V

7

0.146(3.7)

0.130(3.3)

6

5

4

3

2

0.012(0.3) T1y5p0. °C

0.071(1.8)

0.056(1.4)

25°C

-55°C

• Epoxy1 0: UL94-V00.r0a5ted flam0e.1retardan0t.15

0.2

1

0.25

0

0.05

0.1

0.040(1.0)

0.024(0.6)

0.15

0.2

0.25

• Case : Molded plastic,IDS,ODRDA-I1N2C3UHRRENT (AMPS)

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Figure 6. On–Resistance versus Drain Current

Method 2026

0.031(0.8) Typ.

ID, DRAIN CURRENT (AMPS0).031(0.8) Typ.

Figure 7. On–Resistance versus Drain Current

• Polarity : Indicated by cathode band

6

•

Mo

untin

5.5

gVPGoSs=i

t4i.o5nV:

Any

• Weight : Approximated 0.011 gram

5

150°C

Dimensions in inches and (millimeters)

4.5

VGS = 10 V

4

150°C

4.5MAXIMUM RATINGS AND ELECTRICAL CHARACTE3R.5 ISTICS

Ratings at 25℃4 ambient temperature unless otherwise specified.

Single phase 3h.5alf wave, 60Hz, resistive of inductive load.

3

For capacitive l3oad, derate current by 20%

25°C

2.5

25°C

2.5

RATINGS

Marking Code

2

Maximum Recurrent Peak Reverse Voltage

Maximum RMS1V.5oltage

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

2

12

13

14

15

16

18

10

115 120

VRRM

20-55°C 30

410.5

50

60

80

100 -551°C50

200 Volts

VRMS

14

21

28

35

42

56

70

105

140 Volts

Maximum DC Blo1c0king0V.0o5ltag0e.1 0.15 0.2 0.25 0.3 VD0C.35 0.420 0.45 300.5

401 0 0.5050 0.1 600.15 0.2 800.25 0.31000.35 0.14500.45 200.50

Volts

Maximum Average Forward RectifieIdD,CDuRrrAeInNtCURRENT (AMIPOS)

ID1, .D0RAIN CURRENT (AMPS)

Amps

Peak Forward SurgFeigCuurrreent88..3Omns–sRinegsleishatalf nsicnee-wvaevresusIFDSMrain Current

superimposed on rated load (JEDEC method)

Figure 9. On–Re3s0istance versus Drain Current

Typical Thermal Resistance (Note 2)

RΘJA

40

Typical Junction1Capacitance (Note 1)

Operating Temperature Range

CJ

120

TJ

-55 to +125

120

-55 to +150

Storage Temperature Range

TSTG

100

- 65 to +175

Amps

℃/W

PF

℃

℃

0.1 CHARACTERISTTJIC=S150°C

Maximum Forward Voltage at 1.0A DC

25°C

-55°C

SYMBOL FM120-MH FM130-MH FM18400-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

VF

0.50

0.70

0.85

0.9

0.92 Volts

Maximum Average Reverse Current at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

0.01

NOTES:

60

0.5

Ciss10

40

mAmps

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

Coss

20

2- Thermal Resistance From Junction to Ambient

Crss

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

00

5

10

15

20

25

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 10. Body Diode Forward Voltage

Figure 11. Capacitance

2012-06

2012-10

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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