BSS138LT1 Просмотр технического описания (PDF) - Unspecified
Номер в каталоге
Компоненты Описание
производитель
BSS138LT1 Datasheet PDF : 5 Pages
| |||
WILLAS
P1.0oAwSUeRrFAMCEOMSOUFNETTSCH2O0TT0KYmBAARmRIEpRsR,EC5T0IFIEVRoSl-t20sV- 200V
SOD-123+ PACKAGE
FM120-M+
BSS8LTTH1RU
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process
design,
excellent
poweTr dYisPsIiCpaAtiLonEoLffEeCrsTRICAL
CHARACTERISTICS
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
op0t.i8mize board space.
• Low powTeJr=lo25s°sC, high efficViGeSnc=y3..5 V
•
•
0.7
High
Hig0.h6
current capability,
surge capability.
low
forward
voltage
drVoGpS.
=
3.25
V
• Guardring for overvoltage protection.
• Ult0r.a5 high-speed switching.
VGS = 3.0 V
• Sil0ic.4on epitaxial planar chip, metal silicon juncVtGioSn=. 2.75 V
• Lead-free parts meet environmental standards of
MI0L.3-STD-19500 /228
VGS = 2.5 V
• RoHS product for packing code suffix "G"
Ha0lo.2gen free product for packing code suffix "H"
0.9
VDS = 10 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
SOD-123H
0.146(3.7)
0.130(3.3)
-55°C
25°C
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
150°C
Me0c.1hanical data
• Epoxy : UL94-V0 rated flame retardant
0
• Case0: Mo1lded p2lastic3, SO4D-1235H 6 7 8 9 10
•
Terminals
:PlaVtDeSd,
DteRrAmINi-nTaOls-S, OsoUlRdCeEraVbOlLeTApGeEr
(MVOILLT-SS)TD
-7
,
50
0.1
0.040(1.0)
0.024(0.6)
0
00.031(0.8)0T.y5p.
1
1.5
2
2.5
3 0.0313(0.5.8) Typ. 4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
MFeigthuorde210.2O6n–Region Characteristics
• Polarity : Indicated by cathode band
Figure 2. Transfer Characteristics
Dimensions in inches and (millimeters)
• Mou2n.2ting Position : Any
1.25
• Weight : Approximated 0.011 gram
2
1.8MAXIMUM RATINGS AND ELECVIDGT=SR0=.I81CA0AVL CHARACT1.E12R5 ISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase 1h.6alf wave, 60Hz, resistive of inductive load.
For capacitive1.l4oad, derate current by 20%
VGS = 4.5 V
ID = 0.5 A
1
ID = 1.0 mA
1.2
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurr1ent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30 0.84705
50
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS0.V8oltage
VRMS
14
21
28
35
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
0.6
Maximum Averag-eā55Forward Rec-ti5fied Current 45
VDC
20
IO 95
30
40
50
60
80
100
150
200 Volts
0.75
145
-ā55 -30 -5 1.020
45
70
95 120 145
Amps
TJ, JUNCTION TEMPERATURE (°C)
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated loaFd i(gJEuDrEeC3m. eOthno–d)Resistance Variation with
TJ, JUNCTION TEMPERATURE (°C)
30
Figure 4. Threshold Voltage Variation
Amps
Typical Thermal Resistance (Note 2) TemperatureRΘJA
w40ith Temperature
℃/W
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
CJ
120
PF
10
TVTSTJDTJS=G2=54°0CV
-55 to +125
-55 to +150
- 65 to +175
℃
℃
8
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @T A=25℃6
IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
0.85
0.5
10
0.9
0.92 Volts
mAmps
4
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2
ID = 200 mA
2012-06
2012-10
0
0
500
1000
1500
2000
2500 3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Share Link: 