2N60S5 Просмотр технического описания (PDF) - Unspecified
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2N60S5 Datasheet PDF : 9 Pages
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SPN02N60S5
5 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.3 A, VGS = 10 V
SPN02N60S5
17
Ω
14
6 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
6
A
12
4
10
3
8
6
2
4
98%
typ
1
2
0
-60 -20 20
60 100 °C
180
Tj
7 Typ. gate charge
VGS = f (QGate)
parameter: ID = 0.4 A pulsed
SPN02N60S5
16
V
0.2 VDS max
12 0.8 VDS max
10
0
0
4
8
12
V
20
VGS
8 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPN02N60S5
A
10 0
8
6
4
2
0
0
2
4
6
8
nC
12
QGate
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Rev. 2.1
Page 6
2004-03-30
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