C5707 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

C5707

High Current Switching Applications

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC5707

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 175mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.0A; IB= 40mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 2.0A; IB= 40mA

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10uA; IC= 0

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 0.5A; VCE= 2V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V

MIN TYP. MAX UNIT

0.24

V

0.17

V

1.2

V

50

V

6

V

0.1

μA

0.1

μA

200

560

28

pF

330

MHz

isc website：www.iscsemi.com

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