6N60 Просмотр технического описания (PDF) - Unisonic Technologies

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6N60

6.2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

6N60

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 2)

Continuous Drain Current

Pulsed Drain Current (Note 2)

Single Pulsed (Note 3)

Avalanche Energy

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

VDSS

VGSS

IAR

ID

IDM

EAS

EAR

dv/dt

600

V

±30

V

6.2

A

6.2

A

24.8

A

440

mJ

13

mJ

4.5

ns

TO-220

125

TO-220F/TO-220F1

Power Dissipation

TO-220F2

PD

40

W

42

TO-251/TO-252

55

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

TO-220/ TO-220F2

Junction to Ambient TO-220F/TO-220F1

TO-251/TO-252

TO-220

Junction to Case

TO-220F/TO-220F1

TO-220F2

TO-251/TO-252

SYMBOL

θJA

θJC

RATING

62.5

62.5

110

1.0

3.2

2.97

2.27

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-117.G

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