Switching Diodes 1N6638 Series
1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643,
1N6638U & US, 1N6639U & US, 1N6640U & US,
1N6641U & US 1N6642U & US, 1N6643U & US
Features
• Available in JAN, JAN TX, JANTXV
per MIL‐PRF‐19500/578 & /609
• Switching Diodes
• Non‐Cavity Glass Plackage
• Category I Metallurgically Bonded
Maximum Ratings
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current:
300mA
Derating:
See Figure 5
Surge Current:
IFSM = 2.5A, half sine wave,
PW = 8.3ms
Thermal Resistance:
(RӨJEC): U & US 40 °C/W maximum at L = 0”
See Figure 6
(RӨJL): Leaded 150 °C/W maximum at L = .375”
See Figure 7
Thermal Impedance: (ZӨJX): 25 °C/W maximum
Electrical Specifications @ TA = + 25 ºC ( Unless Otherwise Specified )
TYPES
1N6638, U & US
1N6639, U & US
1N6640, U & US
1N6641, U & US
1N6642, U & US
1N6643, U & US
VBR @ IR
V(pk) μA
150 100
100 10
75 10
75 10
100 100
75 100
VWRM
V(pk)
125
75
50
50
75
50
VFR / τfr @
IF = 200 mA
VFR τfr
V(pk) ns
5.0 20
5.0 10
5.0 10
5.0 10
5.0 20
5.0 20
CT1
VR=0 V
CT2
VR=1.5 V
τrr
IR = 10mA
IF = 10mA
IR1
VR=VRWM
IR2
VR=20V
TA = 150°C
IR3
VR=20V
TA = 150°C
IR4
VR = VRWM
pF
pF
ns
nA dc
2.5
2.0
4.5
35
2.5
‐
4.0
‐
2.5
‐
4.0
‐
3.0
‐
5.0
‐
5.0
2.8
5.0
25
5.0
2.8
6.0
50
nA dc
500
100
100
100
500
500
μA dc
50
‐
‐
‐
50
75
μA dc
100
90
90
90
100
100
TYPES
1N6638, U & US
1N6639, U & US
1N6640, U & US
1N6641, U & US
1N6642, U & US
1N6643, U & US
VF @ IF
V dc
(min)
‐
‐
‐
0.54
0.76
0.82
0.87
‐
‐
‐
‐
‐
V dc
(max)
1.1
0.8
1.2
0.62
0.86
0.92
1.0
1.1
1.0
1.2
1.0
1.2
VF2 @ IF
TA = -55°C
V dc
(max)
1.2
‐
1.3
-
‐
‐
1.1
1.2
‐
1.2
‐
1.4
IF
mA
(pulsed)
200
10
500
1
50
100
200
200
10
100
10
100
1
Revision Date: 11/4/2009
New Product