DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MAX886ECJ Просмотр технического описания (PDF) - Maxim Integrated

Номер в каталоге
Компоненты Описание
производитель
MAX886ECJ Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Wireless and Satellite Handset
Power-Management ICs
ELECTRICAL CHARACTERISTICS (continued)
(VBATT = VIN0 = VIN1 = +5.5V, GND = PGND = DGND, V OFF = VSYNC = 2.8V, VIN2 = VIN3 = VIN4 = VIN5 = +3.8V, VOUT4 = +5.5V,
TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
PARAMETER
ON Input Current
SYNC Input Voltage
SYNC Input Current
ONSTAT OUTPUT
ONSTAT Output Voltage
ONSTAT Output Voltage
SYMBOL
IIL
IIH
VIL
VIH
ISYNC
CONDITIONS
V ON = 0
1.2V < V ON < VOUT2
0 < VSYNC < VOUT2
VONSTATL IONSTAT = 1mA
VONSTATH IONSTAT = 0
MIN TYP MAX UNITS
-16
-40
µA
-5
-10
0.8
V
2.0
0.25
1
µA
VOUT2 -
0.5
0.5
V
V
RESET OUTPUT
Output Low Voltage
V R ESETL
Output High Voltage
V R ESETH
THERMAL SHUTDOWN
Threshold Temperature
I2C-COMPATIBLE SERIAL INTERFACE
SCL Clock Frequency
fSCL
SCL Low Period
tLOW
SCL High Period
tHIGH
Data Setup Time
tDSU
Data Hold Time
tDHOLD
OFF, SDA, SCL Input Voltage
VIL
VIH
OFF, SDA, SCL Input Current
IILH
SDA Output Low Voltage
I RESET = 1mA
I RESET = 0,
internal 10kpullup resistor to OUT2
0 < VILH < VOUT2
ISDA = 3mA
ISDA = 6mA
VOUT2 -
0.5
0.5
V
V
160
°C
400 kHz
1.3
µs
0.6
µs
100
ns
0
0.9
µs
0.6
V
1.4
1
µA
0.4
V
0.6
LBO, LBHYS Leakage Current
V LBO = VLBHYST = 12V,
VLBI = VREF + 15mV
-0.2
0.2
µA
Note 1: Specifications to -40°C are guaranteed by design, not production tested.
_______________________________________________________________________________________ 5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]