HGT1S7N60B3DS Просмотр технического описания (PDF) - Intersil
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HGT1S7N60B3DS Datasheet PDF : 7 Pages
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HGTP7N60B3D, HGT1S7N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
1200
1000
800
CIES
FREQUENCY = 1MHz
600
400
200
0
0
COES
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
DUTY CYCLE - DESCENDING ORDER
100 0.5
0.2
0.1
0.05
0.02
0.01
t1
10-1
PD
10-2
10-5
SINGLE PULSE
10-4
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
40
150oC
-55oC
10
5
25oC
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VEC, EMITTER TO COLLECTOR VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
30 TJ = 25oC, dIEC/dt = 200A/µs
trr
25
20
ta
15
tb
10
5
1
2
3
4 56
8 10
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
6
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