HGTP7N60B39A Просмотр технического описания (PDF) - Intersil
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HGTP7N60B39A Datasheet PDF : 7 Pages
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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
td(ON)I
trI
td(OFF)I
IGBT and Diode Both at TJ = 150oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG =50Ω, L = 2mH
Test Circuit (Figure 17)
-
24
-
ns
-
22
-
ns
-
230
295
ns
Current Fall Time
tfI
-
120
175
ns
Turn-On Energy (Note 4)
EON1
-
80
-
µJ
Turn-On Energy (Note 4)
EON2
-
310
350
µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
-
350
500
µJ
-
-
2.1
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the Turn-On loss of the IGBT only. EON2
is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves Unless Otherwise Specified
16
14
12
10
8
6
4
2
0
25
VGE = 15V
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
50
TJ = 150oC, RG = 50Ω, VGE = 15V
40
30
20
10
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
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