HGTD7N60B3S9A Просмотр технического описания (PDF) - Intersil

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Компоненты Описание

производитель

HGTD7N60B3S9A

14A, 600V, UFS Series N-Channel IGBTs

Intersil 

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

ALL TYPES

600

14

7

56

±20

±30

35A at 600V

60

0.476

100

-55 to 150

260

2

12

UNITS

V

A

A

A

V

V

W

W/oC

mJ

oC

oC

µs

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.

2. VCE = 360V, TJ = 125oC, RG = 50Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

Collector to Emitter Breakdown Voltage

BVCES IC = 250µA, VGE = 0V

Emitter to Collector Breakdown Voltage

Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current

Switching SOA

BVECS

ICES

VCE(SAT)

VGE(TH)

IGES

SSOA

IC = 3mA, VGE = 0V

VCE = BVCES

IC = IC110,

VGE = 15V

TC = 25oC

TC = 150oC

TC = 25oC

TC = 150oC

IC = 250µA, VCE = VGE

VGE = ±20V

TJ = 150oC

RG = 50Ω

VGE = 15V

L = 100µH

VCE = 480V

VCE = 600V

Gate to Emitter Plateau Voltage

On-State Gate Charge

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

VGEP

QG(ON)

td(ON)I

trI

td(OFF)I

tfI

IC = IC110, VCE = 0.5 BVCES

IC = IC110,

VCE = 0. 5BVCES

VGE = 15V

VGE = 20V

IGBT and Diode Both at TJ = 25oC

ICE = IC110, VCE = 0.8 BVCES,

VGE = 15V, RG = 50Ω, L = 2mH

Test Circuit (Figure 17)

Turn-On Energy (Note 4)

Turn-On Energy (Note 4)

Turn-Off Energy (Note 3)

EON1

EON2

EOFF

MIN TYP MAX UNITS

600

-

-

V

15

28

-

V

-

-

100

µA

-

-

2.0

mA

-

1.8

2.1

V

-

2.1

2.4

V

3.0

5.1

6.0

V

-

-

±100

nA

42

-

-

A

35

-

-

A

-

7.7

-

V

-

23

28

nC

-

30

37

nC

-

26

-

ns

-

21

-

ns

-

130

160

ns

-

60

80

ns

-

72

-

µJ

-

160

200

µJ

-

120

200

µJ

2

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