HGT1S7N60C3DS Просмотр технического описания (PDF) - Intersil
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HGT1S7N60C3DS Datasheet PDF : 7 Pages
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HGTP7N60C3D, HGT1S7N60C3DS
Typical Performance Curves (Continued)
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
30
10
175oC 100oC 25oC
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
VEC, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
Test Circuit and Waveforms
30 TC = 25oC, dIEC/dt = 200A/µs
25
20
trr
15
ta
10
tb
5
0
0.5
1
3
7
IEC, FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
RG = 50Ω
L = 1mH
RHRD660
+
-
VDD = 480V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
6
VGE
VCE
ICE
90%
10%
EOFF EON
90%
10%
td(OFF) I
tfI
trI
td(ON) I
FIGURE 21. SWITCHING TEST WAVEFORMS
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