G7N60C3D Просмотр технического описания (PDF) - Intersil
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G7N60C3D Datasheet PDF : 7 Pages
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HGTP7N60C3D, HGT1S7N60C3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
IEC = 7A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
-
25
35
ns
-
18
30
ns
-
-
2.1
oC/W
-
-
2.0
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
Typical Performance Curves
40 DUTY CYCLE <0.5%, VCE = 10V
35 PULSE DURATION = 250µs
30
25
20 TC = 150oC
TC = 25oC
15
TC = -40oC
10
5
0
4
6
8
10
12
14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
40 PULSE DURATION = 250µs,
35 DTCUT=Y25CoYCCLE <0.5%,
30
12.0V
10.0V
25
VGE = 15.0V
20
9.0V
15
8.5V
10
8.0V
5
7.5V
0
7.0V
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 10V
30
25
TC = -40oC
20
15
10
5
0
0
TC = 150oC
TC = 25oC
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
30
TC = 25oC
25
20
TC = 150oC
15
10
5
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3
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