HGT1S7N60C3DS9A Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGT1S7N60C3DS9A
Fairchild Semiconductor
HGT1S7N60C3DS9A Datasheet PDF : 9 Pages
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Typical Performance Curves
200
TJ = 150oC, TC = 75oC
100
RG = 50Ω, L = 1mH
VGE = 10V
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W
1
2
10
20
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 13. OPERATING FREQUENCY vs
COLLECTOR TO EMITTER CURRENT
1200
1000
800
FREQUENCY = 1MHz
CIES
600
400
200
CRES
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 15. CAPACITANCE vs COLLECTOR TO
EMITTER VOLTAGE
50
TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH
40
30
20
10
0
0
100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
Figure 14. MINIMUM SWITCHING SAFE
OPERATING AREA
600
15
500
12.5
400
VCE = 200V 10
300
VCE = 400V
7.5
VCE = 600V
200
5
100
IG(REF) = 1.044mA,
2.5
RL = 50Ω, TC = 25oC
0
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
Figure 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
Figure 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
6
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
www.fairchildsemi.com
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