HGT1S7N60C3DS9A Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
HGT1S7N60C3DS9A
Fairchild Semiconductor
HGT1S7N60C3DS9A Datasheet PDF : 9 Pages
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Typical Performance Curves
40 DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
35
30
25
20 TC = 150oC
TC = 25oC
15
TC = -40oC
10
5
0
4
6
8
10
12
14
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 1. TRANSFER CHARACTERISTICS
40 PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
35 TC = 25oC
30
12.0V
10.0V
25
VGE = 15.0V
20
9.0V
15
8.5V
10
8.0V
5
7.5V
0
7.0V
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. SATURATION CHARACTERISTICS
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 10V
30
25
TC = -40oC
20
15
TC = 150oC
10
TC = 25oC
5
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. COLLECTOR TO EMITTER ON-STATE
VOLTAGE
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
30
TC = 25oC
25
20
TC = 150oC
15
10
5
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 4. COLLECTOR TO EMITTER ON-STATE
VOLTAGE
15
12
140
VGE = 15V
VCE = 360V, RG = 50Ω, TJ = 125oC
12
10
120
ISC
9
8
100
6
6
80
3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 5. MAXIMUM DC COLLECTOR CURRENT
vs CASE TEMPERATURE
4
60
tSC
2
40
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 6. SHORT CIRCUIT WITHSTAND TIME
4
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
www.fairchildsemi.com
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