HGT1S7N60C3DS9A Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGT1S7N60C3DS9A
Fairchild Semiconductor
HGT1S7N60C3DS9A Datasheet PDF : 9 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V
600
ICES
Collector to Emitter Leakage Current
VCE = BVCES, TC = 25oC
VCE = BVCES, TC = 150oC
-
IGES
VCE(SAT)
Gate-Emitter Leakage Current
Collector to Emitter Saturation Voltage
VGE = ±25V
IC = IC110,
VGE = 15V
-
TC = 25oC
-
TC = 150oC
-
-
-
V
-
250 µA
2.0 mA
-
±250 nA
1.6 2.0
V
1.9 2.4
V
On Characteristics
VGE(TH) Gate-Emitter Threshold Voltage
SSOA
VGEP
Switching SOA
Gate to Emitter Plateau Voltage
IC = 250µA, VCE = VGE,
TC = 25oC
3.0 5.0 6.0
V
TJ = 150oC, VCE(PK) = 480V
40
-
-
A
RG = 50Ω ,
VGE = 15V, VCE(PK) = 600V
60
-
-
A
L = 1mH
IC = IC110, VCE = 0.5 BVCES
-
8
-
V
Switching Characteristics
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
QG(ON) On-State Gate Charge
TJ = 150oC
ICE = IC110
-
-
VCE(PK) = 0.8 BVCES
-
VGE = 15V
-
RG = 50Ω
-
L = 1mH
-
IC = IC110,
VGE = 15V
-
VCE = 0.5 BVCES VGE = 20V
-
8.5
-
ns
11.5
-
ns
350
400
ns
140
275
ns
165
-
µJ
600
-
µJ
23
30
nC
30
38
nC
Drain-Source Diode Characteristics and Maximum Ratings
VEC
Diode Forward Voltage
IEC = 7A
-
1.9
2.5
V
trr
Diode Reverse Recovery Time
IEC = 7A, dIEC/dt = 200A/µs
-
IEC = 1A, dIEC/dt = 200A/µs
-
25
37
ns
18
30
ns
NOTES:
3.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
3
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
www.fairchildsemi.com
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