BZD27-C12 Просмотр технического описания (PDF) - Philips Electronics
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BZD27-C12 Datasheet PDF : 9 Pages
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Philips Semiconductors
Voltage regulator diodes
Product specification
BZD27 series
TYPE
NUMBER
BZD27-C180
BZD27-C200
BZD27-C220
BZD27-C240
BZD27-C270
BZD27-C300
BZD27-C330
BZD27-C360
BZD27-C390
BZD27-C430
BZD27-C470
BZD27-C510
REVERSE
BREAKDOWN
VOLTAGE
V(BR)R (V)
at Itest
MIN.
168
188
208
228
251
280
310
340
370
400
440
480
TEMPERATURE
COEFFICIENT
SZ (%/K) at Itest
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
TEST
CURREN
T
CLAMPING
VOLTAGE
Itest
(mA)
5
5
2
2
2
2
2
2
2
2
2
2
V(CL)R (V)
MAX.
249
276
305
336
380
419
459
498
537
603
655
707
at IRSM
(A)
note 1
0.60
0.54
0.50
0.45
0.40
0.36
0.33
0.30
0.28
0.25
0.23
0.21
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
IR (µA)
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
at VR
(V)
150
160
180
200
220
240
270
300
330
360
390
430
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
Rth j-a
PARAMETER
thermal resistance from junction to tie-point
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
thermal resistance from junction to ambient
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
CONDITIONS
note 1
VALUE
UNIT
55
K/W
30
K/W
175
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 10
6
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