IRF646 Просмотр технического описания (PDF) - Intersil
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IRF646 Datasheet PDF : 7 Pages
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IRF646
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
D
Diode
G
MIN TYP MAX UNITS
-
-
14
A
-
-
56
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
-
-
1.8
V
150 300 640
ns
1.6
3.4
7.2
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 14A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-216
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