FRF9250H Просмотр технического описания (PDF) - Intersil
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FRF9250H Datasheet PDF : 6 Pages
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FRF9250D, FRF9250R, FRF9250H
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source
(Note 4, 6)
BVDSS FRF9250D, R VGS = 0, ID = 1mA
-200
-
V
Breakdown Volts
(Note 5, 6)
BVDSS FRF9250H
VGS = 0, ID = 1mA
-190
-
V
Gate-Source
(Note 4, 6)
VGS(th) FRF9250D, R VGS = VDS, ID = 1mA
-2.0
-4.0
V
Threshold Volts
(Note 3, 5, 6) VGS(th) FRF9250H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
(Note 4, 6)
IGSSF FRF9250D, R VGS = -20V, VDS = 0
-
Leakage Forward
(Note 5, 6)
IGSSF FRF9250H
VGS = -20V, VDS = 0
-
100
nA
200
nA
Gate-Body
(Note 2, 4, 6) IGSSR FRF9250D, R VGS = 20V, VDS = 0
-
100
nA
Leakage Reverse
(Note 2, 5, 6) IGSSR FRF9250H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
(Note 5, 6)
IDSS
FRF9250D, R VGS = 0, VDS = -160V
-
IDSS
FRF9250H
VGS = 0, VDS = -160V
-
25
µA
100
µA
Drain-Source
(Note 1, 4, 6) VDS(on) FRF9250D, R VGS = -10V, ID = 14A
-
-4.63
V
On-State Volts
(Note 1, 5, 6) VDS(on) FRF9250H
VGS = -16V, ID = 14A
-
-6.95
V
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
RDS(on) FRF9250D, R
RDS(on) FRF9250H
VGS = -10V, ID = 9A
VGS = -14V, ID = 9A
-
0.315
Ω
-
0.473
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 7/21/90 on TA 17752 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
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