FRF9250D Просмотр технического описания (PDF) - Intersil

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производитель

FRF9250D

14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs

Intersil 

FRF9250D, FRF9250R, FRF9250H

Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified

PARAMETER

Drain-Source Breakdown Volts

Gate-Threshold Volts

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero-Gate Voltage

Drain Current

Rated Avalanche Current

Drain-Source On-State Volts

Drain-Source On Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate-Charge Threshold

Gate-Charge On State

Gate-Charge Total

Plateau Voltage

Gate-Charge Source

Gate-Charge Drain

Diode Forward Voltage

Reverse Recovery Time

Junction-To-Case

Junction-To-Ambient

SYMBOL

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS1

IDSS2

IDSS3

IAR

VDS(on)

RDS(on)

td(on)

tr

td(off)

tf

QG(th)

QG(on)

QGM

VGP

QGS

QGD

VSD

TT

Rθjc

Rθja

TEST CONDITIONS

VGS = 0, ID = 1mA

VDS = VGS, ID = 1mA

VGS = -20V

VGS = +20V

VDS = -200V, VGS = 0

VDS = -160V, VGS = 0

VDS = -160V, VGS = 0, TC = +125oC

Time = 20µs

VGS = -10V, ID = 14A

VGS = -10V, ID = 9A

VDD = -100V, ID = 14A

Pulse Width = 3µs

Period = 300µs, Rg = 25Ω

0 ≤ VGS ≤ 10 (See Test Circuit)

VDD = -100V, ID = 14A

IGS1 = IGS2

0 ≤ VGS ≤ 20

ID = 14A, VGD = 0

I = 14A; di/dt = 100A/µs

Free Air Operation

LIMITS

MIN

MAX

-200

-

-2.0

-4.0

-

100

-

100

-

1

-

0.025

-

0.25

-

42

-

-4.63

-

0.315

-

102

-

242

-

658

-

278

3

12

62

248

125

502

2

10

10

42

21

86

-0.6

-1.8

-

600

-

1.0

-

48

UNITS

V

V

nA

nA

mA

A

V

Ω

ns

nc

V

nc

V

ns

oC/W

0V

VGS = -12V

VDD

RGS

RL

VDS

DUT

ELECTRONIC SWITCH OPENS

WHEN IAS IS REACHED

VDS

L

CURRENT

TRANSFORMER

+

IAS

-

VARY tP TO OBTAIN

REQUIRED PEAK IAS

50Ω

0V

tP

50Ω

VGS ≤ 20V

DUT

+

VDD

-

50V -150V

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT

FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

2

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