DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

KA78L08AZ Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
KA78L08AZ
Fairchild
Fairchild Semiconductor Fairchild
KA78L08AZ Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KA78LXXA/KA78L05AA
Electrical Characteristics(KA78L18A) (Continued)
(VI = 27V, IO = 40mA, 0°C TJ 125°C, CI = 0.33 μF, CO = 0.1μF, unless otherwise specified. (Note1)
Parameter
Output Voltage
Line Regulation (Note1)
Load Regulation (Note1)
Output Voltage
Quiescent Current
Quiescent Current
Change
With Line
With Load
Output Noise Voltage
Temperature Coefficient of VO
Ripple Rejection
Dropout Voltage
Symbol
VO
ΔVO
ΔVO
VO
IQ
ΔIQ
ΔIQ
VN
ΔVO/ΔT
RR
VD
Conditions
Min. Typ. Max. Unit
TJ = 25°C
17.3 18 18.7 V
TJ = 25°C
21V VI 33V
22V VI 33V
- 145 300 mV
- 135 250 mV
TJ = 25°C
1mA IO100mA
1mA IO 40mA
- 30 170 mV
- 15 85 mV
21V VI 33V 1mA IO 40mA 17.1 - 18.9 V
21V VI
VMAX (Note 2)
1mA IO 70mA
17.1
-
18.9
V
TJ = 25°C
- 2.2 6.0 mA
21V VI 33V
- - 1.5 mA
1mA IO 40mA
- - 0.1 mA
TA = 25°C, 10Hz f 100kHz
- 150 - μV/Vo
IO = 5mA
- -1.8 - mV/°C
f = 120Hz, 23V VI 33V, TJ = 25°C 34 48 -
dB
TJ = 25°C
- 1.7 -
V
Note:
1. The maximum steady state usable output current and input voltage are very dependent on the heat sinking and/or lead length
of the package. The data above represent pulse test conditions with junction temperature as indicated at the initiation of tests.
2. Power dissipation PD 0.75W.
9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]