DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXBH9N160G Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталоге
Компоненты Описание
производитель
IXBH9N160G Datasheet PDF : 4 Pages
1 2 3 4
IXBH 9N140G
IXBH 9N160G
Symbol
Cies
C
oes
Cres
Q
g
t
d(on)
tri
td(off)
tfi
RthJC
RthCK
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
550
pF
36
pF
5
pF
I = 5 A, V = 600 V, V = 10 V
C
CE
GE
Inductive load, TJ = 125°C
IC = IC90, VGE = 10 V, L = 100 µH,
V
CE
=
960
V,
R
G
=
27
34
nC
140
ns
200
ns
120
ns
70
ns
1.25 K/W
0.25
K/W
Reverse Conduction
Symbol
VF
Conditions
IF = IC90, VGE = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.6
5
TO-247 AD Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
C4
© 2000 IXYS All rights reserved
2 -4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]