SV15 Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

SV15

Fast Recovery Diode

Dynex Semiconductor 

SV15..F

500

Measured under pulse conditions

400

300

200 Tj = 150˚C

100

Tj = 25˚C

0

1.0

1.2

1.4

1.6

1.8

Instantaneous forward voltage VF - (V)

Fig.2 Maximum (limit) forward characteristics

10000

1000

IF

∫ 50µs

QS = 0

tp = 1ms

dIR/dt

QS

IRR

Conditions:

Tj = 150˚C,

VR = 100V

IF = 200

IF = 2000

IF = 1000

IF = 500

100

IF = 100

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.3 Recovered charge

4/7

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