STTA12006TV1 Просмотр технического описания (PDF) - STMicroelectronics

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STTA12006TV1

TURBOSWITCH™ ULTRA-FAST HIGH VOLTAGE DIODE

STMicroelectronics 

STTA12006TV1/2 / STTA6006P

APPLICATION DATA (Cont’d)

Fig. B: STATIC CHARACTERISTICS

I

IF

Rd

VR

V

I R VtO VF

Fig. C: TURN-OFF CHARACTERISTICS

V

IL

TRANSISTOR

I

t

I

dI F /dt

DIODE

V

ta tb

t

I RM

d IR / dt

VR

trr = ta + tb S = tb / ta

Fig. D: TURN-ON CHARACTERISTICS

IF

dIF /dt

I Fmax

0

t

VF

V Fp

1.1V F

0

VF

tfr

t

6/8

Conduction losses :

P1 = Vt0 . IF(AV) + Rd . IF2(RMS)

Reverse losses :

P2 = VR . IR . (1 - δ)

Turn-on losses :

(in the transistor, due to the diode)

P5 = VR

×

IRM 2 × ( 3 + 2 × S ) × F

6 x dIF ⁄ dt

+ VR

×

IRM × IL × ( S + 2 ) × F

2 x dIF ⁄ dt

Turn-off losses (in the diode) :

P3 = VR

× IRM 2 × S

6 x dIF ⁄ dt

×

F

P3 and P5 are suitable for power MOSFET and

IGBT

Turn-on losses :

P4 = 0.4 (VFP - VF) . IFmax . tfr . F

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