TP30-100 Просмотр технического описания (PDF) - STMicroelectronics
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TP30-100 Datasheet PDF : 6 Pages
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TP30-xxx Series
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
P
IPP
ITSM
I2t
dV/dt
Tstg
Tj
TL
Parameter
Power dissipation on infinite heatsink
Tamb = 50 °C
Peak pulse current
10/1000 µs
8/20 µs
Non repetitive surge peak on-state current
I2t value for fusing
tp = 20 ms
tp = 20 ms
Critical rate of rise of off-state voltage
VRM
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm for case
Value
3
30
60
15
1
5
- 55 to + 150
150
230
Unit
W
A
A
A2s
kV/µs
°C
°C
°C
THERMAL RESISTANCES
Symbol
Rth (j-l)
Rth (j-a)
Junction to leads
Parameter
Junction to ambient on printed circuit
with standard footprint dimension
Value
60
100
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
Symbol
VRM
IRM
VR
VBR
VBO
IH
IBO
IPP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
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