NTE5621 Просмотр технического описания (PDF) - NTE Electronics
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NTE5621 Datasheet PDF : 2 Pages
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Peak Blocking Current (Either Direction)
(Rated VDRM, TJ = 100°C, Gate Open)
IDRM
On–State Voltage (Either Direction)
(ITM = 14A Peak)
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12V, RL = 100Ω)
MT2 (+), G (+); MT2 (–), G (–)
Gate Trigger Voltage (Continuous DC)
(Main Terminal Voltage = 12V, RL = 100Ω)
MT2 (+), G (+); MT2 (–), G (–)
Gate Trigger Voltage (Continuous DC – All Modes)
(Main Terminal Voltage = Rated VDRM, RL = 100Ω, TJ = +100°C)
Holding Current (Either Direction)
(Main Terminal Voltage = 12Vdc, Gate Open, IT = 100mA)
Turn–On Time
(ITM = 14A, IGT = 100mA)
Blocking Voltage Application Rate at Commutation
(At VDRM, TJ = +75°C, Gate Open)
VTM
IGT
VGT
VGD
IH
ton
dv/dt
Min Typ Max Unit
mA
––2
V
– 1.3 1.8
mA
– – 50
V
– 0.9 2.0
V
0.2 – –
mA
– – 50
µs
– 1.5 –
V/µs
–5–
.530 (13.4) Max
.143 (3.65) Dia Thru
.668
(17.0)
Max
MT1
Gate
.655
(16.6)
Max
Heat Sink Contact
Area (Bottom)
MT2 (Heat Sink Area)
.166 (4.23)
.150 (3.82) Max
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