HGT1S3N60C3DS9A(2000) Просмотр технического описания (PDF) - Fairchild Semiconductor
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Компоненты Описание
производитель
HGT1S3N60C3DS9A
(Rev.:2000)
(Rev.:2000)
Fairchild Semiconductor
HGT1S3N60C3DS9A Datasheet PDF : 8 Pages
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HGTP3N60C3D, HGT1S3N60C3DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .tSC
HGTP3N60C3D, HGT1S3N60C3DS
600
6
3
24
±20
±30
18A at 480V
33
0.27
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/ oC
oC
oC
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BV CES
I CES
V CE(SAT)
V GE(TH)
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA,
TC = 25oC
VCE = VGE
600
-
-
V
-
-
250
µA
-
-
2.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
3.0
5.5
6.0
V
I GES
SSOA
VGE = ±25V
TJ = 150oC
RG = 82Ω
VGE = 15V
L = 1mH
-
VCE(PK) = 480V
18
VCE(PK) = 600V
2
-
±250
nA
-
-
A
-
-
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
V GEP
Q G(ON)
t d(ON)I
t rI
t d(OFF)I
t fI
E ON
E OFF
V EC
t RR
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
IEC = 3A
IEC = 3A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
-
8.3
-
V
-
10.8 13.5
nC
-
13.8 17.3
nC
-
5
-
ns
-
10
-
ns
-
325
400
ns
-
130
275
ns
-
85
-
µJ
-
245
-
µJ
-
2.0
2.5
V
-
22
28
ns
-
17
22
ns
-
-
3.75 oC/W
-
-
3.0
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
©2001 Fairchild Semiconductor Corporation
HGTP3N60C3D, HGT1S3N60C3DS Rev. A
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