ESDA6V1BC6(2002) Просмотр технического описания (PDF) - STMicroelectronics
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ESDA6V1BC6 Datasheet PDF : 6 Pages
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ESDA6V1BC6
Fig. 1: Peak power dissipation versus initial
junction temperature.
Fig. 2: Peak pulse power versus exponential pulse
duration (Tj initial = 25 °C).
Ppp[Tj initial]/Ppp[Tj initial=25°C]
Ppp(W)
1.1
500
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
Tj initial(°C)
0.0
10
0
25 50 75 100 125 150 175
1
tp(µs)
10
100
Fig. 3: Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 µs.
Ipp(A)
20.0
10.0
tp=2.5µs
1.0
0.1
0
Vcl(V)
5 10 15 20 25 30 35 40
Fig. 4: Capacitance versus reverse applied
voltage (typical values).
C(pF)
22
21
F=1MHz
Vosc=30mV
20
19
18
17
16
15
14
13
12
11
VR(V)
10
012345678
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C]
500
100
10
Tj(°C)
1
25
50
75
100
125
150
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