BUK205-50Y Просмотр технического описания (PDF) - Philips Electronics
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BUK205-50Y Datasheet PDF : 13 Pages
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Philips Semiconductors
TOPFET high side switch
SMD version of BUK201-50Y
Product specification
BUK205-50Y
VLG / V
-10
-12
-14
IL =
1 mA
BUK205-50Y
-16
7.5 A
-18
tp = 300 us
-20
-22
-60
-20
20
60
100
140
180
Tj / C
Fig.28. Typical negative load clamping voltage.
VLG = f(Tj); parameter IL; condition VIG = 0 V.
VBL / V
65
60
55
tp = 300 us
BUK205-50Y
IL =
4A
1 mA
100 uA
50
-60
-20
20
60
100
140
180
Tj / C
Fig.29. Typical battery to load clamping voltage.
VBL = f(Tj); parameter IL; condition IG = 5 mA.
IG / mA
0
BUK205-50Y
-50
-100
-150
-20
-15
-10
-5
0
VBG / V
Fig.30. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
IL / A
0
BUK205-50Y
-10
-20
-30
-40
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
VLB / V
Fig.31. Typical reverse diode characteristic.
IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
Cbl
10 nF
BUK205-50Y
1 nF
100 pF
0
10
20
30
40
50
VBL / V
Fig.32. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
IL / A
60
50
VBL(TO) typ.
40 tp =
30
300 us
BUK205-50Y
current limiting
50 us
i.e. before short
circuit load trip
20
10
0
0
5
10
15
20
25
VBL / V
Fig.33. Typical overload characteristic, Tmb = 25 ˚C.
IL = f(VBL); condition VBG = 13 V; parameter tp
July 1996
10
Rev 1.000
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