MTP3N50E-D Просмотр технического описания (PDF) - Motorola => Freescale
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MTP3N50E-D Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTP3N50E
6
TJ = 25°C
5
4
3
VGS = 10 V
7V
6V
2
1
5V
4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
1.2
VDS = VGS
1.1
ID = 0.25 mA
1
0.9
0.8
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
5
VDS ≥ 10 V
4
3
2
100°C
1
25°C
TJ = –55°C
0
0
2
4
6
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
1.2
1.1
VGS = 0
ID = 250 µA
1
0.9
0.8
–50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Breakdown Voltage Variation
With Temperature
8
VGS = 10 V
6
4
TJ = 100°C
25°C
2
–55°C
0
0
1
2
3
4
5
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
2.5
VGS = 10 V
ID = 1.5 A
2
1.5
1
0.5
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On–Resistance versus Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3
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