DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TC650(2004) Просмотр технического описания (PDF) - Microchip Technology

Номер в каталоге
Компоненты Описание
производитель
TC650 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TC650/TC651
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage (VDD to GND) ................................... +6V
Output Voltage (OUT to GND) ................................. 6V
Voltage On Any Pin ....... (GND – 0.3V) to (VDD + 0.3V)
Operating Temperature Range ......... –40°C to +125°C
Storage Temperature ........................ –65°C to +150°C
Notice: Stresses above those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the
device at these or any other conditions above those indicated
in the operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VDD = 2.8V to 5.5V, SHDN = VDD, TA = –40°C to +125°C.
Parameters
Sym
Min
Typ
Max Units
Conditions
Supply Voltage
Supply Current
SHDN Input
VDD
2.8
5.5
V
IDD
50
90
µA PWM, TOVER are open
SHDN Input High Threshold
VIH
SHDN Input Low Threshold
VIL
PWM Output
65
— %VDD
15 %VDD
PWM Output Low Voltage
PWM Output High Voltage
PWM Rise Time
VOL
VOH
tR
VDD – 0.5
10
0.3
V ISINK = 1 mA
V ISOURCE = 5 mA
µs IOH = 5 mA, 1 nF from
PWM to GND
PWM Fall Time
tF
10
µs IOL = 1 mA, 1 nF from
PWM to GND
PWM Frequency
Start-up Time
fOUT
tSTARTUP
10
15
Hz
32/fOUT — sec VDD Rises from GND
or SHDN Released
Temperature Accuracy
High Temperature Accuracy
TH ACC
Temperature Range Accuracy (TH –TL) ACC
TH – 3
–1.0
–2.5
TH
TH + 3
+1.0
+2.5
Auto-shutdown Hysteresis
THYST
— (TH -TL)/5 —
TOVER Output
TOVER Output High Voltage
VHIGH
VDD – 0.5
TOVER Output Low Voltage
VLOW
0.4
Absolute Accuracy
TOVER ACC
TH + 10 —
Trip Point Hysteresis
TOVER HYST
5
Note 1: Transition from 90% to 100% Duty Cycle.
°C Note 1
°C (TH – TL) 20°C
°C (TH – TL) 20°C
°C TC651 Only
V ISOURCE = 1.2 mA
V ISINK = 2.5 mA
°C At Trip Point
°C
2004 Microchip Technology Inc.
DS21450C-page 3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]