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TC626040VAB Просмотр технического описания (PDF) - TelCom Semiconductor Inc => Microchip

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Компоненты Описание
производитель
TC626040VAB
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC626040VAB Datasheet PDF : 2 Pages
1 2
PRELIMINARY INFORMATION
TEMPERATURE LIMIT SWITCH
TC626
ABSOLUTE MAXIMUM RATINGS*
Package Power Dissipation (TA 70°C)
TO-92 ...........................................................440mW
TO-220 ............................................................1.6mW
Supply Voltage ............................................................20V
Input Voltage Any Input ...... (GND – 0.3V) to (VDD + 0.3V)
Operating Temperature ......................... – 55°C to +125°C
Maximum Junction Temperature ........................... +150°C
Storage Temperature ............................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: VDD = +5V and TA = – 55°C to +125°C, unless otherwise specified.
Parameter
Test Conditions
Min
Typ
Max
Units
Supply Voltage
Supply Current
Output Resistance
Output Current
Absolute Accuracy
Trip Point Hysteresis
Output High or Low
Source/Sink, VCC = 18V
Source/Sink, VCC = 4.5V
At trip point
4.5
T–3
3.5
18
V
300
600
µA
75
25
mA
10
mA
T
T+3
°C
5
6.5
°C
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of
any circuits described herein and makes no representations that they are free from patent infringement.
DETAILED DESCRIPTION
The TC626 output maintains a logic low state when
measured temperature is below the factory-programmed
setting. As temperature rises, the output is driven active to
a high level [VDD – (IOUT)(ROUT)] when temperature equals
the setpoint value ±3°C.
Built-in hysteresis prevents output "chattering" when
measured temperature is at (or near) the trip point (Figure 1).
As temperature falls through the trip point, hysteresis main-
tains the output high until measured temperature is 5°C
lower than the trip point setting.
The TC626VZB (TO-92 package) has a maximum out-
put current of 10mA while the TC626VAB has a maximum
output current of 50mA. Care must be taken to observe
these output current limits as output currents in excess of
those stated will cause device self-heating resulting in
erroneous temperature measurements.
SET POINT
(SET POINT – 5°C)
OUTPUT
Figure 1. TC626 Operation
2-30
TELCOM SEMICONDUCTOR, INC.

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