BUS98-D Просмотр технического описания (PDF) - ON Semiconductor
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BUS98-D Datasheet PDF : 8 Pages
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1.0
0.5 D = 0.5
0.2
0.2
0.1
0.1
0.05
SINGLE PULSE
0.01
0.1
1.0
BUS98 BUS98A
RθJC(t) = r(t) RθJC
RθJC = 0.7°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10
100
1000
t, TIME (ms)
Figure 16. Thermal Response
10000
OVERLOAD CHARACTERISTICS
200
TC = 25°C
160
120
tp = 10 µs
BUS98A
80
BUS98
40
0
100
200
300
400 450 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 17. Rated Overload Safe Operating Area
(OLSOA)
10
OLSOA
OLSOA applies when maximum collector current is
limited and known. A good example Is a circuit where an
inductor is inserted between the transistor and the bus, which
limits the rate of rise of collector current to a known value.
If the transistor is then turned off within a specified amount
of time, the magnitude of collector current is also known.
Maximum allowable collector–emitter voltage versus
collector current is plotted for several pulse widths. (Pulse
width is defined as the time lag between the fault condition
and the removal of base drive.) Storage time of the transistor
has been factored into the curve. Therefore, with bus voltage
and maximum collector current known, Figure 17 defines
the maximum time which can be allowed for fault detection
and shutdown of base drive.
OLSOA is measured in a common–base circuit (Figure
19) which allows precise definition of collector–emitter
voltage and collector current. This is the same circuit that is
used to measure forward–bias safe operating area.
8
6
4
RBE = 5 Ω
RBE = 1.1 Ω
2
RBE = 50 Ω
RBE = 0
0
2
4
6
dV/dt (KV/µs)
8
10
Figure 18. Figure 17. IC = f (dV/dt)
500 µF
500 V
VCC
Notes:
• VCE = VCC + VBE
• Adjust pulsed current source
for desired IC, tp
VEE
Figure 19. Overload SOA Test Circuit
http://onsemi.com
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