HGT1S2N120CNDS9A Просмотр технического описания (PDF) - Intersil
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HGT1S2N120CNDS9A Datasheet PDF : 7 Pages
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HGTP2N120CND, HGT1S2N120CNDS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 2.6A
IEC = 1A, dlEC/dt = 200A/µs
IEC = 2.6A, dlEC/dt = 200A/µs
IGBT
Diode
-
1.8
2.0
V
-
31
35
ns
-
47
52
ns
-
-
1.20
oC/W
-
-
2.5
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
14
VGE = 15V
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
16
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
14
12
10
8
6
4
2
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
200
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
TC VGE
100
75oC 15V
75oC 12V
50
50
50
VCE = 840V, RG = 51Ω, TJ = 125oC
40
40
30
30
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
10
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.2oC/W, SEE NOTES
TC
110oC
110oC
VGE
15V
12V
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
ISC
10
20
tSC
10
0
10
0
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
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