HGTP2N120CNS Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGTP2N120CNS Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Transfer Characteristic
Figure 14. Gate Charage Waveforms
40
DUTY CYCLE <0.5%, VCE = 20V
35 250µS PULSE TEST
30
25
20
15
TC = -55oC
10
5 TC = 25oC
0
7
8
9
TC = 150oC
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
IG(REF) = 1mA, RL = 260Ω, TC = 25oC
14
VCE = 1200V
12
10
8
6
VCE = 400V VCE = 800V
4
2
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
Figure 15. Capacitance vs Collector to Emitter
2.0
FREQUENCY = 1MHz
1.5
CIES
1.0
0.5
COES
0 CRES
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 16. Collector to Emitter On-Sate Voltage
5
DUTY CYCLE <0.5%, TC = 110oC
250µs PULSE TEST
4
VGE = 15V
3
VGE = 10V
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Normalized Transient Thermal Response, Junction to Case
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
10-3
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
6
HGTP2N120CN, HGT1S2N120CN Rev. C
www.fairchildsemi.com
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