PTF10125 Просмотр технического описания (PDF) - Ericsson
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PTF10125 Datasheet PDF : 6 Pages
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PTF 10125
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA
Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 150 mA
Forward Transconductance
VDS = 10 V, ID = 6 A
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
—
3.0
2.0
Typ
—
—
—
4.0
Max
—
5.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage (1)
Gate-Source Voltage (1)
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
(1)per side
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
440
2.51
–40 to +150
0.39
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
17
180
Output Power (W)
16
150
VDD = 28 V
15 IDQ = 1.3 A Total Gain (dB)
120
14
90
13
Efficiency (%)
12
1400
1450
1500
1550
Frequency (MHz)
60
30
1600
Broadband Test Fixture Performance
16
50
Efficiency (%)
14
40
Gain
12
10
8
Return Loss (dB)
30
VDD = 28 V
IDQ = 1.3 A Total
20
-10
POUT = 135 W
-150
6
1450
1475
1500
1525
Frequency (MHz)
-200
1550
2
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