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STH51002Z Просмотр технического описания (PDF) - Infineon Technologies

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производитель
STH51002Z
Infineon
Infineon Technologies Infineon
STH51002Z Datasheet PDF : 3 Pages
1 2 3
1300nm Laser in Coaxial TO-Package
STH51002Z
Designed for application in fiber-optic networks
Laser Diode with Multi-Quantum Well structure
Suitable for bit rates up to 1 Gbit/s
Ternary photodiode at rear mirror for monitoring and
control of radiant power
Hermetically sealed subcomponent, similar to TO 18
with integrated Silicon-Optics for high coupling
efficiencies
Maximum Ratings
Output power ratings refer to the optical port. The operating temperature of the submount
is identical to the case temperature
Module
Symbol Values
Unit
Operating Temperature range at case
TC
Storage Temperature range
Tstg
Soldering Temperature
TS
tmax = 10 s, 2 mm distance from bottom edge of case
- 40... +85 °C
- 40... +85 °C
260
°C
Laserdiode
Direct forward current
Radiant power CW
Reverse Voltage
Monitor Diode
Reverse Voltage
Symbol
IF max
Φe
VR max
Values
120
10
2
Symbol Values
VR max 10
Unit
mA
mW
V
Unit
V
Siemens Aktiengesellschaft
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