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JANTXV4N22AU

Surface Mount Optically Coupled Isolators

Optek Technology 

Product Bulletin JANTX4N22AU

September 1996

Surface Mount Optically Coupled Isolators

Types JANTX, JANTXV, 4N22AU, 4N23AU, 4N24AU

.058 (1.47)

Features

• JANTX, JANTXV qualified per MIL-

PRF-19500/486

• Surface Mountable

• 1 kV Electrical Isolation

• Base contact provided for

conventional transistor biasing

Description

The 4N22AU, 4N23AU, and 4N24AU

series are DESC qualified, surface

mount optically coupled isolators. High

reliability processing on the devices is

performed in accordance with MIL-PRF-

19500/486.

Each device in the series consists of an

infrared emitting diode and an NPN

silicon phototransistor mounted in a

hermetically sealed ceramic surface

mount package.

Absolute Maximum Ratings (TA = 25o C unless otherwise noted)

Input-to-Output Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 1.0 kVDC(1)

Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -65o C to +125o C

Soldering Temperature (vapor phase reflow) . . . . . . . . . . . . . . . . . . . . . . . . . . 215o C

Soldering Temperature (heated collet for 5 sec) . . . . . . . . . . . . . . . . . . . . . . . 260o C

Input Diode

Forward DC Current (65o C or below) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA(2)

Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V

Peak Forward Current (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . 1.00 A

Output Sensor

Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V

Collector-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V

Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0 V

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW(3)

Notes:

(1) Measured with input diode leads shorted together and output leads shorted together.

(2) Derate linearly 0.67 mA/o C above 65o C.

(3) Derate linearly 3.0 mW/o C above 25o C.

Typical screening and lot acceptance

tests are provided on page 13-4. The

burn-in condition is VCE = 10 V, IF = 40

mA, PD = 275 mW, TA = 25o C. Refer to

MIL-PRF-19500/486 for complete

requirements.

When ordering parts without processing,

do not use a JAN prefix.

Optek Technology, Inc.

1215 W. Crosby Road

Carrollton, Texas 75006

15-22

(972)323-2200

Fax (972)323-2396

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