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L6219DS Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
L6219DS
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6219DS Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
L6219
ABSOLUTE MAXIMUM RATINGS
Symbol
VS
Io
Io
VSS
VIN
Vsense
TJ
Top
Tstg
Parameter
Supply Voltage
Output Current (peak)
Output Current (continuous)
Logic Supply Voltage
Logic Input Voltage Range
Sense Output Voltage
Junction Temperature
Operating Temperature Range
Storage Temperature Range
THERMAL DATA
Value
Unit
50
V
±1
A
±0.75
A
7
V
-0.3 to +7
V
1.5
V
+150
°C
-20 to +85
°C
-55 to +150
°C
Symbol
Rthj-case
Rthj-amb
Description
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
(*) With minimized copper area.
Max.
Max.
PDIP
14
60 (*)
SO
18
75 (*)
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VS = 46V, VSS = 4.75V to 5.25V, VREF = 5V; unless oth-
erwise specified) See fig. 3.
Symbol
Parameter
OUTPUT DRIVERS (OUTA or OUTB)
Test Condition
Min. Typ. Max. Unit
VS
Motor Supply Range
ICEX
Output Leakage Current
VCE(sat) Output Saturation Voltage
IR
Clamp Diode Leakage Current
VF
Clamp Diode Forward Voltage
IS(on) Driver Supply Current
IS(off) Driver Supply Current
CONTROL LOGIC
VOUT = Vs
VOUT = 0
Sink Driver, IOUT = +500mA
Sink Driver, IOUT = +750mA
Source Driver, IOUT = -500mA
Source Driver, IOUT = -750mA
VR = 50V
Sink Diode
Source Diode IF =750mA
Both Bridges ON, No Load
Both Bridges OFF
10
46
V
-
<1
50
µA
-
<-1
-50
µA
-
0.3
0.6
V
-
0.7
1
V
-
1.1
1.4
V
-
1.3
1.6
V
-
<1
50
µA
1
1.5
V
1
1.5
V
-
8
15
mA
-
6
10
mA
VIN(H) Input Voltage
VIN(L) Input Voltage
IIN(H)
Input Current
IIN(L)
Input Current
VREF Reference Voltage
ISS(ON) Total Logic Supply Current
ISS(OFF) Total Logic Supply Current
COMPARATORS
All Inputs
All Inputs
VIN = 2.4V
VIN = 0.84V
Operating
Io = I1 = 0.8V, No Load
Io = I1 = 2.4V, No Load
2.4
-
-
V
-
-
0.8
V
-
<1
20
µA
-
-3
-200 µA
1.5
-
7.5
V
-
64
74
mA
-
10
14
mA
VREF / Vsense Current Limit Threshold (at trip
point
toff
Cutoff Time
td
Turn Off Delay
Io = I1 = 0.8V
Io = 2.4V, I1 = 0.8V
Io = 0.8V, I1 = 2.4V
Rt = 56KCt = 820pF
Fig. 1
9.5
10 10.5
-
13.5 15 16.5
-
25.5 30 34.5
-
-
50
µs
-
1
µs
3/9

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