BTS650P Просмотр технического описания (PDF) - Infineon Technologies
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BTS650P Datasheet PDF : 16 Pages
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Data Sheet BTS650P
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
Unit
min typ max
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V 19),
VIS <VOUT - 5V,
VbIN > 4.0 V
see diagram on page 12
IL = 90 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
IIN = 0:
VIN = 0, IL ≤ 0:
Current sense over voltage protection Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
Current sense settling time 20)
kILIS
IIS,lim
IIS(LL)
IIS(LH)
VZ,IS
ts(IS)
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0)
Input current for turn-off 21)
IIN(on)
IIN(off)
12 500 14 200 16 000
12 500 13 700 16 000
11 500 13 000 14 500
12 500 14 500 17 500
12 000 14 000 16 500
11 500 13 400 15 000
12 500 15 000 19 000
11 500 14 300 17 500
11 500 13 500 15 500
11 000 18 000 28 500
11 000 15 400 22 000
11 200 14 000 19 000
6.5
--
-- mA
--
-- 0.5 µA
--
2 65
60
--
-- V
62 66
--
--
-- 500 µs
-- 0.8 1.5 mA
--
-- 80 µA
19) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20) not subject to production test, specified by design
21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Infineon Technologies AG
Page 6
2003-Oct-01
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