BTS712N1(2004) Просмотр технического описания (PDF) - Infineon Technologies
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BTS712N1 Datasheet PDF : 15 Pages
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Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 1.8 A, IN = high
RON [mOhm]
500
450
400
BTS712N1
Typ. ground pin operating current
IGND = f (Vbb,Tj ); VIN = high (one channel on)
IGND [mA]
1.5
1.25
350
Tj = 150°C
300
250
85°C
200
25°C
150
-40°C
100
1
0.75
Tj = -40°C
25°C
0.5
85°C
150°C
0.25
50
0
0
10
20
30
40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1...4 = low
Ibb(off) [µA]
250
0
0
10
20
30
40
50
Vbb [V]
Typ. initial short circuit shutdown time
toff(SC) = f (Tj,start ); Vbb =12 V
toff(SC) [msec]
6
5
200
4
150
3
100
2
50
1
0
0
-50
0
50 100 150 200
-50
0
50
100
150
200
Tj [°C]
Ibb(off) includes four times the current IL(off) of the open
load detection current sources.
Tj,start [°C]
Semiconductor Group
11
2004-Mar-11
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