TE28F004B3TA100 Просмотр технического описания (PDF) - Intel
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TE28F004B3TA100 Datasheet PDF : 58 Pages
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
DC Characteristics, Continued
Sym
Parameter
VCC
VCCQ
Note
VCC + VPP Erase Current
for 0.18 Micron Product
1,2,4
ICCE
+IPPE
VCC + VPP Erase Current
for 0.25 Micron and 0.4
Micron Product
1,2,4
IPPES
IPPWS
VPP Erase Suspend
Current
1,4
2.7 V–3.6 V
2.7 V–3.6 V
Typ Max
16
45
16
45
20
45
16
45
50 200
2.7 V–2.85 V
1.65 V–2.5 V
Typ Max
21
45
16
45
21
45
16
45
50 200
2.7 V–3.3 V
1.8 V–2.5 V
Typ Max
21
45
16
45
21
45
16
45
50 200
Unit Test Conditions
VPP = VPP1, 2, 3
mA Program in
Progress
VPP = VPP4
mA Program in
Progress
VPP = VPP1, 2, 3
mA Program in
Progress
VPP = VPP4
mA Program in
Progress
VPP = VPP1, 2, 3, 4
µA
Program or Erase
Suspend in
Progress
DC Characteristics, Continued
Sym
Parameter
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
VPPLK
VPP1
VPP2
VPP3
VPP4
VLKO
VLKO2
VPP Lock-Out Voltage
VPP during Program and
Erase Operations
VCC Prog/Erase
Lock Voltage
VCCQ Prog/Erase
Lock Voltage
VCC
VCCQ
Note
5
5
5
5
5,6
2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V
2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V Unit Test Conditions
Min Max Min Max Min Max
–0.4
VCC *
0.22 V
–0.4
0.4
–0.4
0.4
V
2.0
VCCQ VCCQ VCCQ VCCQ VCCQ
+0.3V –0.4V +0.3V –0.4V +0.3V
V
–0.1 0.1 -0.1 0.1 -0.1 0.1
VCCQ
–0.1V
VCCQ
–0.1V
VCCQ
–0.1V
1.5
1.5
1.5
VCC = VCCMin
V VCCQ = VCCQMin
IOL = 100 µA
VCC = VCCMin
V VCCQ = VCCQMin
IOH = –100 µA
V
Complete Write
Protection
2.7 3.6
V
2.7 2.85
V
2.7 3.3
V
11.4 12.6 11.4 12.6 11.4 12.6 V
1.5
1.5
1.5
V
1.2
1.2
1.2
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25 °C.
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21
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