TE28F004B3TA100 Просмотр технического описания (PDF) - Intel
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производитель
TE28F004B3TA100 Datasheet PDF : 58 Pages
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
4.4
DC Characteristics
Sym
Parameter
ILI
Input Load Current
VCC
VCCQ
Note
1,2
ILO
ICCS
ICCD
ICCR
IPPD
IPPR
Output Leakage Current
1,2
VCC Standby Current for
0.18 Micron Product
VCC Standby Current for
0.25 Micron and
0.4 Micron Product
VCC Power-Down Current
for 0.18 Micron Product
VCC Power-Down Current
for 0.25 Micron and
0.4 Micron Product
VCC Read Current for
0.18 Micron Product
VCC Read Current for
0.25 and 0.4 Micron
Product
VPP Deep Power-Down
Current
1,2
1,2
1,2
1,2
1,2,3
1,2,3
VPP Read Current
1,4
ICCW+
IPPW
VCC + VPP Program
Current for 0.18 Micron
Product
VCC + VPP Program
Current for 0.25 Micron
and 0.4 Micron Product
1,2,4
1,2,4
2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V
2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V Unit
Test Conditions
Typ Max Typ Max Typ Max
VCC = VCCMax
±1
±1
± 1 µA VCCQ = VCCQMax
VIN = VCCQ or GND
± 10
± 10
± 10
VCC = VCCMax
µA VCCQ = VCCQMax
VIN = VCCQ or GND
7
15
20
50 150 250 µA VCC = VCCMax
CE# = RP# = VCCQ
or during Program/
18
35
20
50 150 250 µA Erase Suspend
WP# = VCCQ or GND
7
15
7
20
7
20
µA VCC = VCCMax
VCCQ = VCCQMax
7
25
7
25
7
25
µA
VIN = VCCQ or GND
RP# = GND ± 0.2 V
9
18
8
15
9
15 mA VCC = VCCMax
VCCQ = VCCQMax
OE# = VIH , CE# =VIL
10 18
8
15
9
15 mA f = 5 MHz, IOUT=0 mA
Inputs = VIL or VIH
0.2
5
0.2
5
0.2
5
µA
RP# = GND ± 0.2 V
VPP ≤ VCC
2
±15
2
±15
2
±15 µA VPP ≤ VCC
50 200 50 200 50 200 µA VPP > VCC
18
55
18
55
18
55
mA
VPP =VPP1, 2, 3
Program in Progress
8
15
10
30
10
30
mA
VPP = VPP4
Program in Progress
18
55
18
55
18
55
mA
VPP =VPP1, 2, 3
Program in Progress
10
30
10
30
10
30
mA
VPP = VPP4
Program in Progress
20
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