2SK2857 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK2857 Datasheet PDF : 8 Pages
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2SK2857
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2 A
VGS = 4 V, ID = 1.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 25 V, ID = 1 A
VGS(on) = 10 V, RG = 10 Ω
RL = 25 Ω
VDS = 48 V
VGS = 10 V
ID = 4 A
IF = 4 A, VGS = 0 V
IF = 4 A, VGS = 0 V
di/dt = 50 A /µs
MIN.
1.0
1
TYP.
1.4
150
110
265
125
56
8
11
52
22
10.6
0.7
3.5
0.86
49
26.6
MAX.
10
±10
2.0
220
150
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RG
RL
VGS
VGS
Wave Form
10 %
0
90 %
VGS(on)
IG = 2 mA
RL
PG. RG = 10 Ω
VDD
PG.
50 Ω
VDD
ID
90 %
90 %
VGS
0
ID
ID
0 10 %
Wave Form
10 %
τ
td(on)
tr
td(off)
tf
τ = 1µ s
Duty Cycle ≤ 1 %
ton
toff
2
Data Sheet D11648EJ2V0DS00
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