BC556 Просмотр технического описания (PDF) - General Semiconductor
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BC556 Datasheet PDF : 6 Pages
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BC556 THRU BC559
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
max.∅ .022 (0.55)
.098 (2.5)
C
E
B
Dimensions in inches and (millimeters)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
♦ These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recommended.
♦ On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
BC556 –VCBO
80
V
BC557 –VCBO
50
V
BC558, BC559 –VCBO
30
V
Collector-Emitter Voltage
BC556 –VCES
80
V
BC557 –VCES
50
V
BC558, BC559 –VCES
30
V
Collector-Emitter Voltage
BC556 –VCEO
65
V
BC557 –VCEO
45
V
BC558, BC559 –VCEO
30
V
Emitter-Base Voltage
–VEBO
5
V
Collector Current
–IC
100
mA
Peak Collector Current
–ICM
200
mA
Peak Base Current
–IBM
200
mA
Peak Emitter Current
IEM
200
mA
Power Dissipation at Tamb = 25 °C
Ptot
5001)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
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