Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
UPA610TA Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
UPA610TA
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
UPA610TA Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
DRAIN TO SOURCE ON–STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS =
–10 V
50
40
30
20
T
A
=
25 °C
T
A
=
–25 °C
10
T
A
=
75 °C
T
A
=
125 °C
0
–0.1
–1
–10
–100
I
D
- Drain Current - mA
–1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
V
GS =
0
f = 1 MHz
C
oss
10
C
iss
C
rss
1
–1
–10
–100
V
DS
- Drain to Source Voltage - V
µ
PA610TA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
50
I
D
=
–1 mA
40
I
D
=
–10 mA
30
I
D
=
–100 mA
20
10
0
0
–2
–4
–6
–8
–10
V
GS
- Gate to Source Voltage - V
1000
100
SWITCHING CHARACTERISTICS
t
r
t
f
t
d(on)
t
d(off)
V
DD
=
–3 V
V
GS(on)
=
–4 V
10
R
in
=
10
Ω
–10
–100
I
D
- Drain Current - mA
–1000
–1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100
–10
–1
–0.1
–0.2
–0.4
–0.6 –0.8 –1.0 –1.2
V
SD
- Source to Drain Voltage - V
4
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]